In this work, design and calibrated simulation of carbon nanotube field effect transistor (CNTFET)-based cascode operational transconductance amplifiers (COTA) have been performed. Three structures of CNTFET-based COTAs have been designed using HSPICE and have been compared with the conventional CMOS-based COTAs. The proposed COTAs include one using pure CNTFETs and two others that employ CNTFETs, as well as the conventional MOSFETs. The simulation study has revealed that the CNTFET-based COTAs have significantly outperformed the conventional MOSFET-based COTAs. A significant increase in dc gain, output resistance and slew rate of 81.4%, 25% and 13.2%, respectively, have been achieved in the proposed pure CNT-based COTA in comparison to the conventional CMOS-based COTA. The power consumption in the pure CNT-COTA is 324 times less in comparison to the conventional CMOS-COTA. Further, the phase margin (PM), gain margin (GM), common mode and power supply rejection ratios have been significantly increased in the proposed CNT-based COTAs in comparison to the conventional CMOS-based COTAs. Furthermore, to see the advantage of cascoding, the proposed CNT-based cascode OTAs have been compared with the CNT-based OTAs. It has been observed that by incorporating the concept of cascode in the CNTFET-based OTAs, significant increases in gain (12.5%) and output resistance (13.07%) have been achieved. The performance of the proposed COTAs has been further observed by changing the number of CNTs (N), CNT pitch (S) and CNT diameter (DCNT) in the CNTFETs used. It has been observed that the performance of the proposed COTAs can be significantly improved by using optimum values of N, S and DCNT.