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Nanoscale Res Lett. 2014 Aug 13;9(1):392. doi: 10.1186/1556-276X-9-392. eCollection 2014.

Temperature dependence of electronic behaviors in quantum dimension junctionless thin-film transistor.

Author information

  • 1Department of Engineering and System Science, National Tsing Hua University, Section 2 Kuang Fu Road, Hsinchu 30013, Taiwan.
  • 2Department of Engineering and System Science, National Tsing Hua University, Section 2 Kuang Fu Road, Hsinchu 30013, Taiwan ; Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University, 1001, Ta Hsueh Road, Hsinchu 30013, Taiwan.
  • 3Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University, 1001, Ta Hsueh Road, Hsinchu 30013, Taiwan.

Abstract

The high temperature dependence of junctionless (JL) gate-all-around (GAA) poly-Si thin-film transistors (TFTs) with 2-nm-thick nanosheet channel is compared with that of JL planar TFTs. The variation of SS with temperature for JL GAA TFTs is close to the theoretical value (0.2 mV/dec/K), owing to the oxidation process to form a 2-nm-thick channel. The bandgap of 1.35 eV in JL GAA TFTs by fitting experimental data exhibits the quantum confinement effect, indicating greater suppression of Ioff than that in JL planar TFTs. The measured [Formula: see text] of -1.34 mV/°C in JL GAA nanosheet TFTs has smaller temperature dependence than that of -5.01 mV/°C in JL planar TFTs.

KEYWORDS:

Gate-all-around (GAA); Junctionless; Nanowire; Quantum confinement effect; Thin-film transistor (TFTs)

PMID:
25147491
[PubMed]
PMCID:
PMC4137723
Free PMC Article

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