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Nanoscale Res Lett. 2014 Jul 10;9(1):347. doi: 10.1186/1556-276X-9-347. eCollection 2014.

Low-temperature growth of highly crystalline β-Ga2O3 nanowires by solid-source chemical vapor deposition.

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  • 1Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Ave., Hongkong SAR, People's Republic of China ; Shenzhen Research Institute, City University of Hong Kong, Shenzhen 518057, People's Republic of China.
  • 2Cultivation Base for State Key Laboratory, Qingdao University, No. 308 Ningxia Road, Qingdao 266071, People's Republic of China.
  • 3Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Ave., Hongkong SAR, People's Republic of China.


Growing Ga2O3 dielectric materials at a moderately low temperature is important for the further development of high-mobility III-V semiconductor-based nanoelectronics. Here, β-Ga2O3 nanowires are successfully synthesized at a relatively low temperature of 610°C by solid-source chemical vapor deposition employing GaAs powders as the source material, which is in a distinct contrast to the typical synthesis temperature of above 1,000°C as reported by other methods. In this work, the prepared β-Ga2O3 nanowires are mainly composed of Ga and O elements with an atomic ratio of approximately 2:3. Importantly, they are highly crystalline in the monoclinic structure with varied growth orientations in low-index planes. The bandgap of the β-Ga2O3 nanowires is determined to be 251 nm (approximately 4.94 eV), in good accordance with the literature. Also, electrical characterization reveals that the individual nanowire has a resistivity of up to 8.5 × 10(7) Ω cm, when fabricated in the configuration of parallel arrays, further indicating the promise of growing these highly insulating Ga2O3 materials in this III-V nanowire-compatible growth condition.


77.55.D; 61.46.Km; 78.40.Fy.


Chemical vapor deposition; Dielectric; Highly crystalline; Large resistance; Solid-source; β-Ga2O3 nanowires

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