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ACS Appl Mater Interfaces. 2014 Aug 27;6(16):14159-66. doi: 10.1021/am5034878. Epub 2014 Aug 1.

Origin of yellow-band emission in epitaxially grown GaN nanowire arrays.

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  • 1Shenyang National Laboratory for Materials Science, Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS) , No. 72 Wenhua Road, Shenyang 110016, China.

Abstract

Here, we report the origin of the yellow-band emission in epitaxial GaN nanowire arrays grown under carbon-free conditions. GaN nanowires directly grown on [0001]-oriented sapphire substrate exhibit an obvious and broad yellow-band in the visible range 400-800 nm, whereas the insertion of Al/Au layers in GaN-sapphire interface significantly depresses the visible emission, and only a sharp peak in the UV range (369 nm) can be observed. The persuasive differences in cathodoluminescence provide direct evidence for demonstrating that the origin of the yellow-band emission in GaN nanowire arrays arises from dislocation threading. The idea using buffering/barrier layers to isolate the dislocation threading in epitaxially grown GaN nanowires can be extended to the rational synthesis and structural defect controlling of a wide range of semiconductor films and nanostructures with superior crystal quality and excellent luminescence property.

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