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Opt Express. 2014 May 19;22(10):11654-9. doi: 10.1364/OE.22.011654.

Optical absorption and photocurrent enhancement in semi-insulating gallium arsenide by femtosecond laser pulse surface microstructuring.


We observe an enhancement of optical absorption and photocurrent from semi-insulating gallium arsenide (SI-GaAs) irradiated by femtosecond laser pulses. The SI-GaAs wafer is treated by a regeneratively amplified Ti: Sapphire laser of 120 fs laser pulse at 800 nm wavelength. The laser ablation induced 0.74 μm periodic ripples, and its optical absorption-edge is shifted to a longer wavelength. Meanwhile, the steady photocurrent of irradiated SI-GaAs is found to enhance 50%. The electrical properties of samples are calibrated by van der Pauw method. It is found that femtosecond laser ablation causes a microscale anti-reflection coating surface which enhances the absorption and photoconductivity.

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