An Ag3PO4/nitridized Sr2Nb2O7 composite photocatalyst with adjustable band structures for efficient elimination of gaseous organic pollutants under visible light irradiation

Nanoscale. 2014 Jul 7;6(13):7303-11. doi: 10.1039/c4nr00537f.

Abstract

A new Ag3PO4/nitridized Sr2Nb2O7 (N: 0-6.18 wt%) heterojunction was designed to eliminate gaseous pollutants under visible light irradiation. The phase compositions, optical properties, and morphologies of the heterojunction photocatalysts were systematically investigated via powder X-ray diffraction, UV-visible absorption spectroscopy, scanning electron microscopy, energy-dispersive X-ray spectroscopy, and transmission electron microscopy. Calculations of the electronic structure indicated that the top of the valance band of Sr2Nb2O7 could be raised by nitrogen doping. Therefore, the electronic structure of the Ag3PO4/nitridized Sr2Nb2O7 composite photocatalysts could be continually changed by controlling the amount of nitrogen in nitridized Sr2Nb2O7. Photocatalytic degradation of isopropyl alcohol (IPA) was carried out to test the photocatalytic activity of the heterojunction. The highest activity (CO2 evolution rate, 10.32 ppm h(-1)) was observed over the Ag3PO4/nitridized Sr2Nb2O7 heterojunction prepared by nitridation of Sr2Nb2O7 (SNO) at 1023 K. The CO2 evolution rate over the heterojunction was about 40 times higher than that over pure Ag3PO4 (CO2 evolution rate, 0.26 ppm h(-1)) under visible light irradiation. An investigation of the energy-band structure via valence band X-ray photoelectron spectroscopy indicated that the conduction band (CB) and valence band (VB) of Ag3PO4 are both more positive than those of nitridized Sr2Nb2O7, which facilitates the separation and transfer of photogenerated electrons and holes between the two photocatalysts. By continually adjusting the electronic structures, an optimal band gap for the nitridized Sr2Nb2O7 of 2.15 eV was obtained, and the potential of the valance band was +1.88 eV.

Publication types

  • Research Support, Non-U.S. Gov't