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Chemistry. 2014 May 19;20(21):6288-93. doi: 10.1002/chem.201400412.

Analysis of dopant atom distribution and quantification of oxygen vacancies on individual Gd-doped CeO2 nanocrystals.

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  • 1Ernst Ruska-Centre, Forschungszentrum Jülich, 52425 Jülich (Germany); Brazilian Nanotechnology National Laboratory, 13083-970, Campinas, SP (Brazil); Current position: International Iberian Nanotechnology Laboratory (INL), Braga (Portugal).


This work reports the analysis of the distribution of Gd atoms and the quantification of O vacancies applied to individual CeO2 and Gd-doped CeO2 nanocrystals by electron energy-loss spectroscopy. The concentration of O vacancies measured on the undoped system (6.3±2.6 %) matches the expected value given the typical Ce(3+) content previously reported for CeO2 nanoparticles. The doped nanoparticles have an uneven distribution of dopant atoms and an atypical amount of O vacant sites (37.7±4.1 %). The measured decrease of the O content induced by Gd doping cannot be explained solely by the charge balance including Ce(3+) and Gd(3+) ions.

© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.


CeO2; EELS (electron energy-loss spectroscopy); dopant segregation; gadolinium; ionic conductors; oxygen vacancies

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