Quantum and classical magnetoresistance in ambipolar topological insulator transistors with gate-tunable bulk and surface conduction

Jifa Tian; Cuizu Chang; Helin Cao; Ke He; Xucun Ma; Qikun Xue; Yong P Chen

doi:10.1038/srep04859

Quantum and classical magnetoresistance in ambipolar topological insulator transistors with gate-tunable bulk and surface conduction

Sci Rep. 2014 May 7:4:4859. doi: 10.1038/srep04859.

Authors

Jifa Tian¹, Cuizu Chang², Helin Cao¹, Ke He³, Xucun Ma³, Qikun Xue⁴, Yong P Chen⁵

Affiliations

¹ 1] Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907, USA [2] Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA.
² 1] Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China [2] State Key Laboratory for Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, P. R. China.
³ Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China.
⁴ State Key Laboratory for Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, P. R. China.
⁵ 1] Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907, USA [2] Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA [3] School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA.

Abstract

Weak antilocalization (WAL) and linear magnetoresistance (LMR) are two most commonly observed magnetoresistance (MR) phenomena in topological insulators (TIs) and often attributed to the Dirac topological surface states (TSS). However, ambiguities exist because these phenomena could also come from bulk states (often carrying significant conduction in many TIs) and are observable even in non-TI materials. Here, we demonstrate back-gated ambipolar TI field-effect transistors in (Bi0.04Sb0.96)2Te3 thin films grown by molecular beam epitaxy on SrTiO3(111), exhibiting a large carrier density tunability (by nearly 2 orders of magnitude) and a metal-insulator transition in the bulk (allowing switching off the bulk conduction). Tuning the Fermi level from bulk band to TSS strongly enhances both the WAL (increasing the number of quantum coherent channels from one to peak around two) and LMR (increasing its slope by up to 10 times). The SS-enhanced LMR is accompanied by a strongly nonlinear Hall effect, suggesting important roles of charge inhomogeneity (and a related classical LMR), although existing models of LMR cannot capture all aspects of our data. Our systematic gate and temperature dependent magnetotransport studies provide deeper insights into the nature of both MR phenomena and reveal differences between bulk and TSS transport in TI related materials.

Publication types

Research Support, U.S. Gov't, Non-P.H.S.