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Appl Radiat Isot. 2014 Aug;90:165-9. doi: 10.1016/j.apradiso.2014.03.027. Epub 2014 Apr 5.

The radiation damage of crystalline silicon PN diode in tritium beta-voltaic battery.

Author information

  • 1Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, China.
  • 2Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, China. Electronic address: leiyisongm3@163.com.

Abstract

A tritium beta-voltaic battery using a crystalline silicon convertor composed of (100)Si/SiO2/Si3N4 film degrades remarkably with radiation from a high intensity titanium tritide film. Simulation and experiments were carried out to investigate the main factor causing the degradation. The radiation damages mainly comes from the x-ray emitted from the titanium tritide film and beta particle can relieve the damages. The x-ray radiation induced positive charges in the SiO2 film destroying the output property of the PN diode with the induction of an electric field.

Copyright © 2014 Elsevier Ltd. All rights reserved.

KEYWORDS:

ESR; Geant4; Radiation damage; SiO(2)–Si; Soft x-ray; Tritium beta-voltaic

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