Format

Send to:

Choose Destination
See comment in PubMed Commons below
Sci Rep. 2014 Apr 9;4:4614. doi: 10.1038/srep04614.

Transparent multi-level resistive switching phenomena observed in ITO/RGO/ITO memory cells by the sol-gel dip-coating method.

Author information

  • 1School of Electrical Engineering, Korea University, Anam-dong 5-ga, Sungbuk-gu, Seoul 136-701, Republic of Korea.

Abstract

A reduced graphene oxide (RGO)-based transparent electronic memory cell with multi-level resistive switching (RS) was successfully realized by a dip-coating method. Using ITO/RGO/ITO structures, the memory device exhibited a transmittance above 80% (including the substrate) in the visible region and multi-level RS behavior in the 00, 01, 10, and 11 states by varying the pulse height from 2 V to 7 V. In the reliability test, the device exhibited a good endurance of over 10(5) cycles and a long data retention of over 10(5) s at 85°C in each state. We believe that the RGO-based transparent memory presented in this work could be a milestone for future transparent electronic devices.

PMID:
24714566
[PubMed]
PMCID:
PMC3980222
Free PMC Article
PubMed Commons home

PubMed Commons

0 comments
How to join PubMed Commons

    Supplemental Content

    Full text links

    Icon for Nature Publishing Group Icon for PubMed Central
    Loading ...
    Write to the Help Desk