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Small. 2014 May 28;10(10):1920-5. doi: 10.1002/smll.201302965. Epub 2014 Mar 5.

Direct-write complementary graphene field effect transistors and junctions via near-field electrospinning.

Author information

  • 1Department of Physics, University of California at Berkeley, USA; Berkeley Sensor and Actuator Center, University of California at Berkeley, USA.

KEYWORDS:

electrical junction; field effect transistor; graphene; graphene doping; near-field electrospinning

PMID:
24599879
[PubMed - in process]
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