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ACS Appl Mater Interfaces. 2014 Mar 26;6(6):4207-13. doi: 10.1021/am405885c. Epub 2014 Mar 6.

Edge oxidation effect of chemical-vapor-deposition-grown graphene nanoconstriction.

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  • 1Department of Physics and Graphene Research Institute, Sejong University , Seoul 143-747, Korea.


The edge oxidation effects of chemical-vapor-deposition-grown graphene devices with nanoconstrictions of different sizes are presented. The effects of edge oxidation on the doping level of a nanoconstriction graphene device were identified by Raman spectroscopy and using the back-gate-voltage-dependent resistance. Strong p-type doping was observed as the size of nanoconstriction decreased. The Dirac point of the graphene device shifted toward positive voltage, and the positions of the G and 2D peaks in Raman spectroscopy shifted toward a higher wave number, indicating the p-type doping effect of the graphene device. p-type doping was lifted by deep-ultraviolet light illumination under a nitrogen atmosphere at room temperature. p-type doping was restored by deep-ultraviolet light illumination under an oxygen atmosphere at room temperature. Edge oxidation in the narrow structures explains the origin of the p-type doping effect widely observed in graphene nanodevices.

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