Format

Send to

Choose Destination
See comment in PubMed Commons below
Nanoscale Res Lett. 2014 Feb 12;9(1):72. doi: 10.1186/1556-276X-9-72.

Investigation of hydrogen plasma treatment for reducing defects in silicon quantum dot superlattice structure with amorphous silicon carbide matrix.

Author information

  • 1Department of Physical Electronics, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8552, Japan. yamada.s.aj@m.titech.ac.jp.

Abstract

We investigate the effects of hydrogen plasma treatment (HPT) on the properties of silicon quantum dot superlattice films. Hydrogen introduced in the films efficiently passivates silicon and carbon dangling bonds at a treatment temperature of approximately 400°C. The total dangling bond density decreases from 1.1 × 1019 cm-3 to 3.7 × 1017 cm-3, which is comparable to the defect density of typical hydrogenated amorphous silicon carbide films. A damaged layer is found to form on the surface by HPT; this layer can be easily removed by reactive ion etching.

PubMed Commons home

PubMed Commons

0 comments
How to join PubMed Commons

    Supplemental Content

    Full text links

    Icon for Springer Icon for PubMed Central
    Loading ...
    Write to the Help Desk