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Nanotechnology. 2014 Feb 7;25(5):055501. doi: 10.1088/0957-4484/25/5/055501. Epub 2014 Jan 9.

A metal-semiconductor-metal detector based on ZnO nanowires grown on a graphene layer.

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  • 1Department of Physics, Xiamen University, Xiamen, 361005, People's Republic of China.


High quality ZnO nanowires (NWs) were grown on a graphene layer by a hydrothermal method. The ZnO NWs revealed higher uniform surface morphology and better structural properties than ZnO NWs grown on SiO2/Si substrate. A low dark current metal-semiconductor-metal photodetector based on ZnO NWs with Au Schottky contact has also been fabricated. The photodetector displays a low dark current of 1.53 nA at 1 V bias and a large UV-to-visible rejection ratio (up to four orders), which are significantly improved compared to conventional ZnO NW photodetectors. The improvement in UV detection performance is attributed to the existence of a surface plasmon at the interface of the ZnO and the graphene.

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