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Chem Commun (Camb). 2014 May 25;50(40):5342-4. doi: 10.1039/c3cc47577h. Epub 2013 Dec 9.

Furan fused V-shaped organic semiconducting materials with high emission and high mobility.

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  • 1The Institute of Scientific and Industrial Research (ISIR), Osaka Univ., 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan.


We report a facile synthetic protocol for preparation of dinaphtho[2,3-b:2',3'-d]furan (DNF-V) derivatives. DNF-V derivatives showed high emissive behaviour in solid. A solution-crystallized transistor based on alkylated DNF-V derivatives showed an excellent carrier mobility of up to 1.3 cm(2) V(-1) s(-1), thereby proving to be a new solution-processable active organic semiconductor with high emission and high mobility.

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