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Phys Rev Lett. 2013 Oct 11;111(15):156402. Epub 2013 Oct 11.

Interface-induced topological insulator transition in GaAs/Ge/GaAs quantum wells.

Author information

  • 1SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China.

Abstract

We demonstrate theoretically that interface engineering can drive germanium, one of the most commonly used semiconductors, into a topological insulating phase. Utilizing giant electric fields generated by charge accumulation at GaAs/Ge/GaAs opposite semiconductor interfaces and band folding, the new design can reduce the sizable gap in Ge and induce large spin-orbit interaction, which leads to a topological insulator transition. Our work provides a new method to realize topological insulators in commonly used semiconductors and suggests a promising approach to integrate it in well-developed semiconductor electronic devices.

PMID:
24160616
[PubMed]
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