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Nano Lett. 2013 Nov 13;13(11):5085-9. doi: 10.1021/nl402244p. Epub 2013 Oct 21.

Polarity-driven nonuniform composition in InGaAs nanowires.

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  • 1Materials Engineering, The University of Queensland , Brisbane, QLD 4072, Australia.


Manipulating the composition and morphology of semiconductor nanowires in a precisely controlled fashion is critical in developing nanowire devices. This is particularly true for ternary III-V nanowires. Many studies have shown the complexities within those nanowires. Here we report our findings of compositional irregularity in the shells of core-shell InGaAs nanowires with zinc-blende structure. Such an effect is caused by the crystal polarity within III-V zinc-blende lattice and the one-dimensional nature of nanowires that allows the formation of opposite polar surfaces simultaneously on the nanowire sidewalls. This polarity-driven effect in III-V nanowires may be utilized in manipulating the composition and morphology of III-V nanowires for device applications.

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