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ACS Appl Mater Interfaces. 2013 Oct 9;5(19):9429-34. doi: 10.1021/am403243g. Epub 2013 Sep 26.

Interface-engineered resistive switching: CeO(2) nanocubes as high-performance memory cells.

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  • 1School of Materials Science and Engineering, University of New South Wales , Sydney, 2052 New South Wales, Australia.


We reported a novel and facile approach to fabricate self-assembled CeO2 nanocube-based resistive-switching memory device. The device was found to exhibit excellent bipolar resistive-switching characteristics with a high resistance state (HRS/OFF) to low resistance state (LRS/ON) ratio of 10(4), better uniformity, and stability up to 480 K. The presence of oxygen vacancies and their role was discussed to explain the resistive-switching phenomenon in the fabricated devices. Further, the effect of the film thickness on carrier concentrations and estimated electric field strength with the switching (OFF/ON) ratio were also discussed.

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