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Nano Lett. 2013 Sep 11;13(9):4362-8. doi: 10.1021/nl4021705. Epub 2013 Aug 13.

Electroassisted transfer of vertical silicon wire arrays using a sacrificial porous silicon layer.

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  • 1Department of Mechanical Engineering, Stanford University , California 94305, United States.

Abstract

An electroassisted method is developed to transfer silicon (Si) wire arrays from the Si wafers on which they are grown to other substrates while maintaining their original properties and vertical alignment. First, electroassisted etching is used to form a sacrificial porous Si layer underneath the Si wires. Second, the porous Si layer is separated from the Si wafer by electropolishing, enabling the separation and transfer of the Si wires. The method is further expanded to develop a current-induced metal-assisted chemical etching technique for the facile and rapid synthesis of Si nanowires with axially modulated porosity.

PMID:
23919596
[PubMed - indexed for MEDLINE]
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