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Nanotechnology. 2013 Sep 6;24(35):355202. doi: 10.1088/0957-4484/24/35/355202. Epub 2013 Aug 6.

Graphene interconnects fully encapsulated in layered insulator hexagonal boron nitride.

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  • 1College of Nanoscale Science and Engineering, State University of New York, Albany, NY 12203, USA.

Abstract

We demonstrate improvements in the electrical performance of graphene interconnects with full encapsulation by lattice-matching layered insulator, hexagonal boron nitride (h-BN). A novel layer-based transfer method is developed to assemble the top passivating layer of h-BN on the graphene surface to construct the h-BN/graphene/h-BN heterostructures. The encapsulated graphene interconnects (EGIs) are characterized and compared with graphene interconnects on either SiO₂ or h-BN substrates with no top passivating h-BN layer. We observe significant improvements in both the maximum current density and breakdown voltage in EGIs. Compared with the uncovered structures, EGIs also show an appreciable increase (∼67%) in power density at breakdown. These improvements are achieved without degrading the carrier transport characteristics in graphene wires. In addition, EGIs exhibit a minimal environment impact, showing electrical behavior insensitive to ambient conditions.

PMID:
23917400
[PubMed]
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