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Guang Pu Xue Yu Guang Pu Fen Xi. 2013 May;33(5):1295-8.

[Preparation and properties of P-type Cd1-xZn(x)Te thin films].

[Article in Chinese]

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  • 1College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China.


Cd1-xZnxTe:Cu Thin films were prepared by co-evaporation method. X-ray Fluorescence Spectrometry (XRF), scanning electron microscope(SEM), UV-Vis transmission spectra, thermal probe, four-probe method, step profiler and X-ray diffractometer (XRD) were used to investigate the composition, structure, morphology, optical and electrical properties of Cd1-x ZnxTe:Cu thin films with different doping concentration. The results show that the resistivity of 10% copper doped Cd1-x ZnxTe films increased several magnitude and the conductive type changed from p-type to n-type after annealing. The 20% cu-doped Cdl, Zn,Te films had not obvious change in conductive type and electrical resistivity after annealing and they exhibit good surface morphology. The transmissivity of 30% cu-doped Cd1-x, ZnxTe films decreased seriously below 10% after annealing, which indicate that they are not suitable to be the top cell materials in tandem structure. The 20% and 30% cu-doped Cd1-x Zn, Te films were both p-type conductivity.

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