Send to:

Choose Destination
See comment in PubMed Commons below
J Phys Condens Matter. 2013 Sep 4;25(35):355007. doi: 10.1088/0953-8984/25/35/355007. Epub 2013 Jul 31.

Stress inversion from initial tensile to compressive side during ultrathin oxide growth of the Si(100) surface.

Author information

  • 1Department of Applied Physics, National Defense Academy, 1-10-20 Hashirimizu, Yokosuka 239-8686, Japan.


We report the real-time observation of the stress change during sub-nanometer oxide growth on the Si(100) surface. Oxidation initially induced a rapid buildup of tensile stress up to -1.9 × 10(8) N m(-2) with an oxide thickness of 0.25 nm, followed by gradual compensation by a compressive stress. The compressive stress saturated at 5 × 10(7) N m(-2) for an oxide thickness of 1.2 nm. The analysis, assisted by theoretical study, indicates that the observed initial tensile stress is caused by oxygen bridge-bonding between the Si dimers. Atomistic model calculations considering mutually orthogonal orientations of the Si(100) surface structure reproduce the stress inversion from the tensile to the compressive side.

[PubMed - indexed for MEDLINE]
PubMed Commons home

PubMed Commons

How to join PubMed Commons

    Supplemental Content

    Full text links

    Icon for IOP Publishing Ltd.
    Loading ...
    Write to the Help Desk