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Phys Chem Chem Phys. 2013 Jul 28;15(28):11926-30. doi: 10.1039/c3cp51043c. Epub 2013 Jun 14.

Kinetics of Schottky defect formation and annihilation in single crystal TlBr.

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  • 1Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA. srbishop@mit.edu


The kinetics for Schottky defect (Tl and Br vacancy pair) formation and annihilation in ionically conducting TlBr are characterized through a temperature induced conductivity relaxation technique. Near room temperature, defect generation-annihilation was found to take on the order of hours before equilibrium was reached after a step change in temperature, and that mechanical damage imparted on the sample rapidly increases this rate. The rate limiting step to Schottky defect formation-annihilation is identified as being the migration of lower mobility Tl (versus Br), with an estimate for source-sink density derived from calculated diffusion lengths. This study represents one of the first investigations of Schottky defect generation-annihilation kinetics and demonstrates its utility in quantifying detrimental mechanical damage in radiation detector materials.

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