Display Settings:

Format

Send to:

Choose Destination
Phys Chem Chem Phys. 2013 Jul 28;15(28):11926-30. doi: 10.1039/c3cp51043c. Epub 2013 Jun 14.

Kinetics of Schottky defect formation and annihilation in single crystal TlBr.

Author information

  • 1Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA. srbishop@mit.edu

Abstract

The kinetics for Schottky defect (Tl and Br vacancy pair) formation and annihilation in ionically conducting TlBr are characterized through a temperature induced conductivity relaxation technique. Near room temperature, defect generation-annihilation was found to take on the order of hours before equilibrium was reached after a step change in temperature, and that mechanical damage imparted on the sample rapidly increases this rate. The rate limiting step to Schottky defect formation-annihilation is identified as being the migration of lower mobility Tl (versus Br), with an estimate for source-sink density derived from calculated diffusion lengths. This study represents one of the first investigations of Schottky defect generation-annihilation kinetics and demonstrates its utility in quantifying detrimental mechanical damage in radiation detector materials.

PMID:
23764761
[PubMed]
PubMed Commons home

PubMed Commons

0 comments
How to join PubMed Commons

    Supplemental Content

    Full text links

    Icon for Royal Society of Chemistry
    Loading ...
    Write to the Help Desk