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Nanoscale Res Lett. 2013 Jun 12;8(1):285. doi: 10.1186/1556-276X-8-285.

Low-temperature synthesis of graphene on Cu using plasma-assisted thermal chemical vapor deposition.

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  • 1Department of Optics and Photonics/Thin Film Technology Center, National Central University, 300 Chung-Da Rd, Chung-Li, 32001, Taiwan.


Plasma-assisted thermal chemical vapor deposition (CVD) was carried out to synthesize high-quality graphene film at a low temperature of 600°C. Monolayer graphene films were thus synthesized on Cu foil using various ratios of hydrogen and methane in a gaseous mixture. The in situ plasma emission spectrum was measured to elucidate the mechanism of graphene growth in a plasma-assisted thermal CVD system. According to this process, a distance must be maintained between the plasma initial stage and the deposition stage to allow the plasma to diffuse to the substrate. Raman spectra revealed that a higher hydrogen concentration promoted the synthesis of a high-quality graphene film. The results demonstrate that plasma-assisted thermal CVD is a low-cost and effective way to synthesis high-quality graphene films at low temperature for graphene-based applications.

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