Ultra-high-ohmic microstripline resistors for Coulomb blockade devices

Nanotechnology. 2013 Jun 14;24(23):235201. doi: 10.1088/0957-4484/24/23/235201. Epub 2013 May 13.

Abstract

In this paper, we report on the fabrication and low-temperature characterization of ultra-high-ohmic microstripline resistors made of a thin film of weakly oxidized titanium. Nearly linear voltage-current characteristics were measured at temperatures down to T ~ 20 mK for films with sheet resistivities as high as ~7 kΩ, i.e. about an order of magnitude higher than our previous findings for weakly oxidized Cr. Our analysis indicates that such an improvement can help to create an advantageous high-impedance environment for different Coulomb blockade devices. Further properties of the Ti film addressed in this work show the promise of low-noise behavior of the resistors when applied in different realizations of the quantum standard of current.