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Nano Lett. 2013 Apr 10;13(4):1549-54. doi: 10.1021/nl3047078. Epub 2013 Mar 12.

Utilizing the unique properties of nanowire MOSFETs for RF applications.

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  • 1Department of Electrical and Computer Engineering, Brick Nanotechnology Center, Purdue University, West Lafayette, Indiana 47904, United States. arazavie@purdue.edu


Nanostructures have attracted a great deal of attention because of their potential usefulness for high density applications. More importantly, they offer excellent avenues for improved scaling beyond conventional approaches. Less attention has been paid to their intrinsic potential for distinct circuit applications. Here we discuss how a combination of 1-D transport, operation in the quantum capacitance limit, and ballistic transport can be utilized for certain RF applications. In particular this work explores how the above transport properties can provide a high degree of transconductance linearity at the device level. The article also discusses how device characteristics can be interpreted and analyzed in terms of device linearity if the above conditions are not ideally fulfilled. Using aggressively scaled silicon nanowire field-effect transistors as an example device in this work provides new insights toward the proper choice of channel material to improve linearity through the above-mentioned transport conditions. According to this study, a high degree of linearity occurs feasible while operating at low supply voltages making low-dimensional systems, and here in particular nanowires, an interesting candidate for portable RF applications.

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