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ACS Nano. 2013 Mar 26;7(3):2335-43. doi: 10.1021/nn305558r. Epub 2013 Mar 5.

Near-Infrared photoluminescence in the femtosecond time region in monolayer graphene on SiO₂.

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  • 1Department of Applied Physics, Graduate School of Engineering, Nagoya University, Chikusa, Nagoya 464-8603, Japan.


We investigate the dynamical properties of photoexcited carriers in a single monolayer of graphene at room temperature in air using femtosecond time-resolved luminescence spectroscopy. The luminescence kinetics are observed in the near-infrared region of 0.7-1.4 eV and analyzed based on the two-temperature model describing the cooling of thermalized carriers via the carrier-optical phonon interaction. The observed luminescence in the range 0.7-0.9 eV is well reproduced by the model. In the range 1.0-1.4 eV, however, the luminescence, which decays in ∼300 fs, cannot be reproduced by this model. These results indicate that the carrier system is not completely thermalized in ∼300 fs. We also show the importance of the carrier-doping effect induced by the substrate and surrounding environment in the carrier cooling dynamics and the predominance of optical phonons over acoustic phonons in the carrier-phonon interactions even at a temperature of ∼400 K.

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