Low-temperature solution-processed hydrogen molybdenum and vanadium bronzes for an efficient hole-transport layer in organic electronics

Fengxian Xie; Wallace C H Choy; Chuandao Wang; Xinchen Li; Shaoqing Zhang; Jianhui Hou

doi:10.1002/adma.201204425

Low-temperature solution-processed hydrogen molybdenum and vanadium bronzes for an efficient hole-transport layer in organic electronics

Adv Mater. 2013 Apr 11;25(14):2051-5. doi: 10.1002/adma.201204425. Epub 2013 Feb 6.

Authors

Fengxian Xie¹, Wallace C H Choy, Chuandao Wang, Xinchen Li, Shaoqing Zhang, Jianhui Hou

Affiliation

¹ Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, China.

PMID: 23386363
DOI: 10.1002/adma.201204425

Abstract

A simple one-step method is reported to synthesize low-temperature solution-processed transition metal oxides (TMOs) of molybdenum oxide and vanadium oxide with oxygen vacancies for a good hole-transport layer (HTL). The oxygen vacancy plays an essential role for TMOs when they are employed as HTLs: TMO films with excess oxygen are highly undesirable for their application in organic electronics.

Publication types

Research Support, Non-U.S. Gov't

MeSH terms

Electronics*
Hydrogen / chemistry
Molybdenum / chemistry*
Oxides / chemistry*
Polystyrenes / chemistry
Solar Energy
Solutions / chemistry
Temperature
Thiophenes / chemistry
Vanadium Compounds / chemistry*

Substances

Oxides
Polystyrenes
Solutions
Thiophenes
Vanadium Compounds
poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)
molybdenum trioxide
Hydrogen
Molybdenum
vanadium pentoxide