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Phys Rev Lett. 2012 Dec 21;109(25):256401. Epub 2012 Dec 17.

Electronic Griffiths phase in the Te-doped semiconductor FeSb2.

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  • 1Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, USA.

Abstract

We report on the emergence of an electronic Griffiths phase in the doped semiconductor FeSb(2), predicted for disordered insulators with random localized moments in the vicinity of a metal-insulator transition. Magnetic, transport, and thermodynamic measurements of Fe(Sb(1-x)Te(x))(2) single crystals show signatures of disorder-induced non-Fermi liquid behavior and a Wilson ratio expected for strong electronic correlations. The electronic Griffiths phase states are found on the metallic boundary between the insulating state (x = 0) and a long-range albeit weak magnetic order (x ≥ 0.075).

PMID:
23368482
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