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Nanoscale Res Lett. 2013 Jan 10;8(1):22. doi: 10.1186/1556-276X-8-22.

GR-FET application for high-frequency detection device.

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  • 1Graduate School of Advanced Integration Science, Chiba University, Chiba, 263-8522, Japan.


A small forbidden gap matched to low-energy photons (meV) and a quasi-Dirac electron system are both definitive characteristics of bilayer graphene (GR) that has gained it considerable interest in realizing a broadly tunable sensor for application in the microwave region around gigahertz (GHz) and terahertz (THz) regimes. In this work, a systematic study is presented which explores the GHz/THz detection limit of both bilayer and single-layer graphene field-effect transistor (GR-FET) devices. Several major improvements to the wiring setup, insulation architecture, graphite source, and bolometric heating of the GR-FET sensor were made in order to extend microwave photoresponse past previous reports of 40 GHz and to further improve THz detection.

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