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Nat Commun. 2012;3:1280. doi: 10.1038/ncomms2286.

Modulation-doped growth of mosaic graphene with single-crystalline p-n junctions for efficient photocurrent generation.

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  • 1Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.


Device applications of graphene such as ultrafast transistors and photodetectors benefit from the combination of both high-quality p- and n-doped components prepared in a large-scale manner with spatial control and seamless connection. Here we develop a well-controlled chemical vapour deposition process for direct growth of mosaic graphene. Mosaic graphene is produced in large-area monolayers with spatially modulated, stable and uniform doping, and shows considerably high room temperature carrier mobility of ~5,000 cm(2) V(-1) s(-1) in intrinsic portion and ~2,500 cm(2) V(-1) s(-1) in nitrogen-doped portion. The unchanged crystalline registry during modulation doping indicates the single-crystalline nature of p-n junctions. Efficient hot carrier-assisted photocurrent was generated by laser excitation at the junction under ambient conditions. This study provides a facile avenue for large-scale synthesis of single-crystalline graphene p-n junctions, allowing for batch fabrication and integration of high-efficiency optoelectronic and electronic devices within the atomically thin film.

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