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Sci Rep. 2012;2:893. doi: 10.1038/srep00893. Epub 2012 Nov 27.

Biaxial compressive strain engineering in graphene/boron nitride heterostructures.

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  • 1National Laboratory of Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.


Strain engineered graphene has been predicted to show many interesting physics and device applications. Here we study biaxial compressive strain in graphene/hexagonal boron nitride heterostructures after thermal cycling to high temperatures likely due to their thermal expansion coefficient mismatch. The appearance of sub-micron self-supporting bubbles indicates that the strain is spatially inhomogeneous. Finite element modeling suggests that the strain is concentrated on the edges with regular nano-scale wrinkles, which could be a playground for strain engineering in graphene. Raman spectroscopy and mapping is employed to quantitatively probe the magnitude and distribution of strain. From the temperature-dependent shifts of Raman G and 2D peaks, we estimate the TEC of graphene from room temperature to above 1000K for the first time.

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