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Nanoscale Res Lett. 2012 Nov 21;7(1):634. doi: 10.1186/1556-276X-7-634.

In situ-grown hexagonal silicon nanocrystals in silicon carbide-based films.

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  • 1Convergence Components and Materials Laboratory, Electronics and Telecommunications Research Institute (ETRI), Daejeon 305-700, Republic of Korea. youby@etri.re.kr.


Silicon nanocrystals (Si-NCs) were grown in situ in carbide-based film using a plasma-enhanced chemical vapor deposition method. High-resolution transmission electron microscopy indicates that these nanocrystallites were embedded in an amorphous silicon carbide-based matrix. Electron diffraction pattern analyses revealed that the crystallites have a hexagonal-wurtzite silicon phase structure. The peak position of the photoluminescence can be controlled within a wavelength of 500 to 650 nm by adjusting the flow rate of the silane gas. We suggest that this phenomenon is attributed to the quantum confinement effect of hexagonal Si-NCs in silicon carbide-based film with a change in the sizes and emission states of the NCs.

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