Transparent high-performance thin film transistors from solution-processed SnO2 /ZrO2 gel-like precursors

Jaewon Jang; Rungrot Kitsomboonloha; Sarah L Swisher; Eung Seok Park; Hongki Kang; Vivek Subramanian

doi:10.1002/adma.201202997

Transparent high-performance thin film transistors from solution-processed SnO2 /ZrO2 gel-like precursors

Adv Mater. 2013 Feb 20;25(7):1042-7. doi: 10.1002/adma.201202997. Epub 2012 Nov 14.

Authors

Jaewon Jang¹, Rungrot Kitsomboonloha, Sarah L Swisher, Eung Seok Park, Hongki Kang, Vivek Subramanian

Affiliation

¹ Department of Electrical Engineering and Computer Sciences, University of California-Berkeley, CA 94720-1770, USA.

PMID: 23161491
DOI: 10.1002/adma.201202997

Abstract

This work employs novel SnO(2) gel-like precursors in conjunction with sol-gel deposited ZrO(2) gate dielectrics to realize high-performance transparent transistors. Representative devices show excellent performance and transparency, and deliver mobility of 103 cm(2) V(-1) s(-1) in saturation at operation voltages as low as 2 V, a sub-threshold swing of only 0.3 V/decade, and /(on) //(off) of 10(4) ~10(5) .

Publication types

Research Support, Non-U.S. Gov't

MeSH terms

Electricity
Gels
Particle Size
Tin Compounds / chemistry*
Transistors, Electronic*
Zirconium / chemistry*

Substances

Gels
Tin Compounds
Zirconium
stannic oxide
zirconium oxide