Display Settings:


Send to:

Choose Destination
Nano Lett. 2012 Nov 14;12(11):5576-80. doi: 10.1021/nl302584w. Epub 2012 Oct 29.

Thermally driven crossover from indirect toward direct bandgap in 2D semiconductors: MoSe2 versus MoS2.

Author information

  • 1Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA. tongay@berkeley.edu


Layered semiconductors based on transition-metal chalcogenides usually cross from indirect bandgap in the bulk limit over to direct bandgap in the quantum (2D) limit. Such a crossover can be achieved by peeling off a multilayer sample to a single layer. For exploration of physical behavior and device applications, it is much desired to reversibly modulate such crossover in a multilayer sample. Here we demonstrate that, in a few-layer sample where the indirect bandgap and direct bandgap are nearly degenerate, the temperature rise can effectively drive the system toward the 2D limit by thermally decoupling neighboring layers via interlayer thermal expansion. Such a situation is realized in few-layer MoSe(2), which shows stark contrast from the well-explored MoS(2) where the indirect and direct bandgaps are far from degenerate. Photoluminescence of few-layer MoSe(2) is much enhanced with the temperature rise, much like the way that the photoluminescence is enhanced due to the bandgap crossover going from the bulk to the quantum limit, offering potential applications involving external modulation of optical properties in 2D semiconductors. The direct bandgap of MoSe(2), identified at 1.55 eV, may also promise applications in energy conversion involving solar spectrum, as it is close to the optimal bandgap value of single-junction solar cells and photoelechemical devices.

PubMed Commons home

PubMed Commons

How to join PubMed Commons

    Supplemental Content

    Full text links

    Icon for American Chemical Society
    Loading ...
    Write to the Help Desk