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ACS Appl Mater Interfaces. 2012 Oct 24;4(10):5103-8. doi: 10.1021/am3016203. Epub 2012 Oct 1.

Preferentially grown ultranano c-diamond and n-diamond grains on silicon nanoneedles from energetic species with enhanced field-emission properties.

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  • 1Department of Physics, Tamkang University, Tamsui, Taiwan 251, ROC. peetijoseph@gmail.com

Abstract

The design and fabrication of well-defined nanostructures have great importance in nanoelectronics. Here we report the precise growth of sub-2 nm (c-diamond) and above 5 nm (n-diamond) size diamond grains from energetic species (chemical vapor deposition process) at low growth temperature of about 460 °C. We demonstrate that a pre-nucleation induced interface can be accounted for the growth of c-diamond or n-diamond grains on Si-nanoneedles (Si-NN). These preferentially grown allotropic forms of diamond on Si-NN have shown high electron field-emission properties and signify their high potential towards diamond-based electronic applications.

PMID:
23016635
[PubMed]
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