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Nano Lett. 2012 Oct 10;12(10):5148-54. doi: 10.1021/nl303201w. Epub 2012 Sep 26.

Quantitative nanoscale imaging of lattice distortions in epitaxial semiconductor heterostructures using nanofocused X-ray Bragg projection ptychography.

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  • 1Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA. shrus@anl.gov


We imaged nanoscale lattice strain in a multilayer semiconductor device prototype with a new X-ray technique, nanofocused Bragg projection ptychography. Applying this technique to the epitaxial stressor layer of a SiGe-on-SOI structure, we measured the internal lattice behavior in a targeted region of a single device and demonstrated that its internal strain profile consisted of two competing lattice distortions. These results provide the strongest nondestructive test to date of continuum modeling predictions of nanoscale strain distributions.

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