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J Nanosci Nanotechnol. 2012 Jul;12(7):5687-90.

Electronic structures and carrier distributions of T-shaped AlxGa1-xAs/AlyGa1-yAs quantum wires fabricated by a cleaved-edge overgrowth method.

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  • 1Department of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, Korea.


The electronic structures and carrier distributions of T-shaped AlxGa1_xAs/AlyGa1-yAs quantum wire (QWR) consisting of crossed arm and stem wells were numerically calculated by using a finite-difference method (FDM). The electronic subband energies in the arm and the stem wells were numerically calculated by using the FDM taking into account two-band Hamiltonian systems considering with and without strain and nonparabolicity effects. The band deformation due to strain and the probabilistic electron confinement of T-shaped AlxGa1-xAs/AlyGa1-yAs QWRs were also calculated. The transition energy from the ground heavy-hole state (HH1) to the ground electron state (E1) was 1.584 eV when the strain was not considered and 1.585 eV when the strain effects were included. The excitonic peak energies corresponding to the interband transitions (E1-HH1) in the T-shaped QWRs determined from the photoluminescence spectra were compared favorably with those determined from the FDM calculations.

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