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J Nanosci Nanotechnol. 2012 Aug;12(8):6737-40.

Nonresonant detection of terahertz radiation in high-electron-mobility transistor structure using InAIAs/InGaAs/InP material systems at room temperature.

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  • 1Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai 980-8577, Japan.


In this paper, we report on nonresonant detection of terahertz radiation using the rectification mechanism of two-dimensional plasmons in high-electron-mobility transistors using InAIAs/InGaAs/InP material systems. The experiments were performed at room temperature using a Gunn diode operating at 0.30 THz as the THz source. The measured response was dependent on the polarization of the incident THz wave; The device exhibited higher response when the electric-field vector of the incident radiation was directed in the source-drain direction. The 2D spatial distribution image of the transistor responsivity extracted from the measured response shows a clear beam focus centered on the transistor position, which ensures the appropriate coupling of the terahertz radiation to the device. The device also demonstrated excellent sensitivity/noise performances of approximately 125 V/W and approximately 10(-11) W/Hz(0.5) under 0.30 THz radiation.

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