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Opt Lett. 2012 Jul 1;37(13):2745-7. doi: 10.1364/OL.37.002745.

Passively Q-switched microchip Er, Yb:YAl3(BO3)4 diode-pumped laser.

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  • 1Center for Optical Materials and Technologies, Belarusian National Technical University, 65 Nezavisimosti Avenue, Building 17, Minsk, Belarus.


We report, for the first time to our knowledge, a diode-pumped cw and passively Q-switched microchip Er, Yb:YAl(3)(BO(3))(4) laser. A maximal output power of 800 mW at 1602 nm in the cw regime was obtained at an absorbed pump power of 7.7 W. By using Co(2+):MgAl(2)O(4) as a saturable absorber, a TEM(00)-mode Q-switched average output power of 315 mW was demonstrated at 1522 nm, with pulse duration of 5 ns and pulse energy of 5.25 μJ at a repetition rate of 60 kHz.

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