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Opt Express. 2012 May 21;20(11):12014-20. doi: 10.1364/OE.20.012014.

Ultralow drive voltage silicon traveling-wave modulator.

Author information

  • 1Department of Electrical Engineering, University of Washington, Campus Box 352500, Seattle, Washington 98195, USA. baehrjt@washington.edu

Abstract

There has been great interest in the silicon platform as a material system for integrated photonics. A key challenge is the development of a low-power, low drive voltage, broadband modulator. Drive voltages at or below 1 Vpp are desirable for compatibility with CMOS processes. Here we demonstrate a CMOS-compatible broadband traveling-wave modulator based on a reverse-biased pn junction. We demonstrate operation with a drive voltage of 0.63 Vpp at 20 Gb/s, a significant improvement in the state of the art, with an RF energy consumption of only 200 fJ/bit.

PMID:
22714187
[PubMed - indexed for MEDLINE]
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