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Chem Commun (Camb). 2012 Jul 25;48(58):7307-9. doi: 10.1039/c2cc33818a. Epub 2012 Jun 18.

Mode tunable p-type Si nanowire transistor based zero drive load logic inverter.

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  • 1Department of Materials Science and Engineering, Yonsei University, 134 Shinchondong, Seoul, 120-749, Korea.

Abstract

A design platform for a zero drive load logic inverter consisting of p-channel Si nanowire based transistors, which controlled their operating mode through an implantation into a gate dielectric layer was demonstrated. As a result, a nanowire based class D inverter having a 4.6 gain value at V(DD) of -20 V was successfully fabricated on a substrate.

PMID:
22711254
[PubMed]
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