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Nanotechnology. 2012 Jun 1;23(21):215204. doi: 10.1088/0957-4484/23/21/215204.

Few electron limit of n-type metal oxide semiconductor single electron transistors.

Author information

  • 1Laboratorio MDM, CNR-IMM, Via Olivetti 2, I-20864 Agrate Brianza, Italy. enrico.prati@cnr.it

Abstract

We report the electronic transport on n-type silicon single electron transistors (SETs) fabricated in complementary metal oxide semiconductor (CMOS) technology. The n-type metal oxide silicon SETs (n-MOSSETs) are built within a pre-industrial fully depleted silicon on insulator (FDSOI) technology with a silicon thickness down to 10 nm on 200 mm wafers. The nominal channel size of 20 × 20 nm(2) is obtained by employing electron beam lithography for active and gate level patterning. The Coulomb blockade stability diagram is precisely resolved at 4.2 K and it exhibits large addition energies of tens of meV. The confinement of the electrons in the quantum dot has been modeled by using a current spin density functional theory (CS-DFT) method. CMOS technology enables massive production of SETs for ultimate nanoelectronic and quantum variable based devices.

PMID:
22552118
[PubMed - indexed for MEDLINE]
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