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Nanotechnology. 2012 May 4;23(17):175701. doi: 10.1088/0957-4484/23/17/175701. Epub 2012 Apr 5.

Large array of single, site-controlled InAs quantum dots fabricated by UV-nanoimprint lithography and molecular beam epitaxy.

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  • 1Optoelectronics Research Centre, Tampere University of Technology, FIN-33101 Tampere, Finland. andreas.schramm@tut.fi

Abstract

We present the growth of single, site-controlled InAs quantum dots on GaAs templates using UV-nanoimprint lithography and molecular beam epitaxy. A large quantum dot array with a period of 1.5 µm was achieved. Single quantum dots were studied by steady-state and time-resolved micro-photoluminescence experiments. We obtained single exciton emission with a linewidth of 45 µeV. In time-resolved experiments, we observed decay times of about 670 ps. Our results underline the potential of nanoimprint lithography and molecular beam epitaxy to create large-scale, single quantum dot arrays.

PMID:
22481170
[PubMed]
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