Format

Send to:

Choose Destination
See comment in PubMed Commons below
Nano Lett. 2012 Apr 11;12(4):1972-6. doi: 10.1021/nl204510p. Epub 2012 Apr 2.

Domain wall motion in synthetic Co2Si nanowires.

Author information

  • 1Department of Chemistry and Biochemistry, University of California, Los Angeles, California 90095, USA.

Abstract

We report the synthesis of single crystalline Co(2)Si nanowires and the electrical transport studies of single Co(2)Si nanowire devices at low temperature. The butterfly shaped magnetoresistance shows interesting ferromagnetic features, including negative magnetoresistance, hysteretic switch fields, and stepwise drops in magnetoresistance. The nonsmooth stepwise magnetoresistance response is attributed to magnetic domain wall pinning and depinning motion in the Co(2)Si nanowires probably at crystal or morphology defects. The temperature dependence of the domain wall depinning field is observed and described by a model based on thermally assisted domain wall depinning over a single energy barrier.

© 2012 American Chemical Society

PMID:
22469009
[PubMed - indexed for MEDLINE]
PMCID:
PMC3493485
Free PMC Article
PubMed Commons home

PubMed Commons

0 comments
How to join PubMed Commons

    Supplemental Content

    Full text links

    Icon for American Chemical Society Icon for PubMed Central
    Loading ...
    Write to the Help Desk