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Adv Mater. 2012 Apr 10;24(14):1862-6. doi: 10.1002/adma.201104796. Epub 2012 Mar 7.

Large magnetoresistance in few layer graphene stacks with current perpendicular to plane geometry.

Author information

  • 1State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing, P.R. China. liaozm@pku.edu.cn

Abstract

A large magnetoresistance (MR) effect of few-layers graphene between two non-magnetic metal electrodes with current perpendicular to graphene plane is studied. A non-saturation and anisotropic MR with the value over 60% at 14 T is observed in a two-layer graphene stack at room temperature. The resistance of the device is only tens of ohms, having the advantage of low power consumption for magnetic device applications.

Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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