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Opt Express. 2012 Jan 30;20(3):2507-15. doi: 10.1364/OE.20.002507.

25 Gbit/s silicon microring modulator based on misalignment-tolerant interleaved PN junctions.

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  • 1Optoelectronic System Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China.


A high-speed depletion-mode silicon-based microring modulator with interleaved PN junctions optimized for high modulation efficiency and large alignment tolerance is demonstrated. It is fabricated using standard 0.18 μm complementary metal-oxide-semiconductor processes and provides low V(π)L(π)s of 0.68 V·cm to 1.64 V·cm with a moderate doping concentration of 2 × 10(17) cm(-3). The measured modulation efficiency decreases by only 12.4% under ± 150 nm alignment errors. 25 Gbit/s non-return-zero modulation with a 4.5 dB extinction ratio is experimentally realized at a peak-to-peak driving voltage of 2 V, demonstrating the excellent performance of the novel doping profile.

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