THz generation at 1.55 µm excitation: six-fold increase in THz conversion efficiency by separated photoconductive and trapping regions

Roman J B Dietz; Marina Gerhard; Dennis Stanze; Martin Koch; Bernd Sartorius; Martin Schell

doi:10.1364/OE.19.025911

THz generation at 1.55 µm excitation: six-fold increase in THz conversion efficiency by separated photoconductive and trapping regions

Opt Express. 2011 Dec 19;19(27):25911-7. doi: 10.1364/OE.19.025911.

Authors

Roman J B Dietz¹, Marina Gerhard, Dennis Stanze, Martin Koch, Bernd Sartorius, Martin Schell

Affiliation

¹ Fraunhofer Instiute for Telecommunications, Heinrich-Hertz-Institute, Berlin, Germany. Roman.Dietz@hhi.fraunhofer.de

PMID: 22274179
DOI: 10.1364/OE.19.025911

Abstract

We present first results on photoconductive THz emitters for 1.55µm excitation. The emitters are based on MBE grown In0.53Ga0.47As/In0.52Al0.48As multilayer heterostructures (MLHS) with high carrier mobility. The high mobility is achieved by spatial separation of photoconductive and trapping regions. Photoconductive antennas made of these MLHS are evaluated as THz emitters in a THz time domain spectrometer (THz TDS). The high carrier mobility and effective absorption significantly increases the optical-to-THz conversion efficiency with THz bandwidth in excess of 3 THz.

Publication types

Research Support, Non-U.S. Gov't

MeSH terms

Equipment Design
Equipment Failure Analysis
Lighting / instrumentation*
Optical Devices*
Terahertz Radiation*