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Sensors (Basel). 2010;10(12):10571-600. doi: 10.3390/s101210571. Epub 2010 Nov 29.

Near-infrared sub-bandgap all-silicon photodetectors: state of the art and perspectives.

Author information

  • 1Istituto per la Microelettronica e Microsistemi (IMM), Consiglio Nazionale delle Ricerche (CNR), Via P. Castellino 111, 80131 Napoli, Italy. maurizio.casalino@na.imm.cnr.it

Abstract

Due to recent breakthroughs, silicon photonics is now the most active discipline within the field of integrated optics and, at the same time, a present reality with commercial products available on the market. Silicon photodiodes are excellent detectors at visible wavelengths, but the development of high-performance photodetectors on silicon CMOS platforms at wavelengths of interest for telecommunications has remained an imperative but unaccomplished task so far. In recent years, however, a number of near-infrared all-silicon photodetectors have been proposed and demonstrated for optical interconnect and power-monitoring applications. In this paper, a review of the state of the art is presented. Devices based on mid-bandgap absorption, surface-state absorption, internal photoemission absorption and two-photon absorption are reported, their working principles elucidated and their performance discussed and compared.

KEYWORDS:

absorption; optoelectronics; photodetector; ring resonator; silicon; waveguide

PMID:
22163487
[PubMed - indexed for MEDLINE]
PMCID:
PMC3231101
Free PMC Article
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