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J Nanosci Nanotechnol. 2011 Jul;11(7):6025-8.

Investigation on light emission in light-emitting diodes constructed with n-ZnO and p-Si nanowires.

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  • 1Department of Electrical Engineering, Korea University, Seoul 136-713, Republic of Korea.


The light emission was investigated in light-emitting diodes (LEDs) constructed with n-ZnO and p-Si nanowires (NWs). ZnO NWs were synthesized by thermal chemical vapor deposition and Si NWs were formed by crystallographic wet etching of a Si wafer. The LEDs were fabricated using the NWs via dielectrophoresis (DEP) and direct transfer methods. The DEP method enabled to align the ZnO NW at the position that led to p-n heterojunction diodes by crossing with the transferred Si NW. The I-V curve of the p-n heterojunction diode showed the well-defined current-rectifying characteristic, with a turn-on voltage of 3 V. The electroluminescence spectrum in the dark showed the strong emission at approximately 385 nm and the broad emission centered at approximately 510 nm, at a forward bias of 30 V. Under the illumination of 325-nm-wavelength light, the luminescence intensity at 385 nm was dramatically enhanced, compared to that in the dark, probably due to the electric-field-induced enhancement of luminescence.

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